The possibility to reduce the thermal conductivity leaving essentially unaltered the electron transport makes semiconducting nanowires ideal materials for the engineering of high-efficiency thermoelectric devices. A simple and appealing route to achieve these goals is bringing together Si and Ge, giving rise to Si1 x Gex alloy nanowires with tunable Ge concentration, core–shell structures and multiple axial junctions, i.e. superlattices. In this chapter we review the most recent pro- gresses in this field.
SiGe nanowires for thermoelectric applications / M., Amato; M., Palummo; R., Rurali; Ossicini, Stefano. - STAMPA. - 16:(2014), pp. 497-515.
SiGe nanowires for thermoelectric applications
OSSICINI, Stefano
2014
Abstract
The possibility to reduce the thermal conductivity leaving essentially unaltered the electron transport makes semiconducting nanowires ideal materials for the engineering of high-efficiency thermoelectric devices. A simple and appealing route to achieve these goals is bringing together Si and Ge, giving rise to Si1 x Gex alloy nanowires with tunable Ge concentration, core–shell structures and multiple axial junctions, i.e. superlattices. In this chapter we review the most recent pro- gresses in this field.File | Dimensione | Formato | |
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