Metastable deexcitation spectroscopy (MDS) was applied to the study of the growth of the Yb/GaAs(110) interface. MD spectra taken at different coverages, from 0.04 ML to 30 ML, revealed the progressive metallization of the overlayer. Absence of 4f emission allowed to observe, for the first time, VB features of the forming interface up to similar to 8 ML.
A MDS study of the Yb/GaAs(110) interface / Pasquali, Luca; Fantini, P; Nannarone, Stefano; Canepa, M; Mattera, L.. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - STAMPA. - 76:(1995), pp. 133-137. [10.1016/0368-2048(95)02427-1]
A MDS study of the Yb/GaAs(110) interface
PASQUALI, Luca;NANNARONE, Stefano;
1995
Abstract
Metastable deexcitation spectroscopy (MDS) was applied to the study of the growth of the Yb/GaAs(110) interface. MD spectra taken at different coverages, from 0.04 ML to 30 ML, revealed the progressive metallization of the overlayer. Absence of 4f emission allowed to observe, for the first time, VB features of the forming interface up to similar to 8 ML.
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