Metastable atom de-excitation spectroscopy results on the surfaces of clean semiconductors are shown. De-excitation occurs through resonant ionization followed by Auger neutralization. After a review of the results obtained on the clean surface of GaAs(110) at room temperature, the evolution of the Ge(111) effective surface density of states (SDOS) as a function of temperature is discussed on the basis of the temperature-induced surface structure transitions reported in literature by different authors. (C) 1998 Elsevier Science B.V. All rights reserved.
Resonant ionization plus Auger neutralization in the study of the electronic structure of clean semiconductor surfaces / Pasquali, Luca; Canepa, M; Mattera, L; Nannarone, Stefano. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - STAMPA. - 93:(1998), pp. 159-164.
Resonant ionization plus Auger neutralization in the study of the electronic structure of clean semiconductor surfaces
PASQUALI, Luca;NANNARONE, Stefano
1998
Abstract
Metastable atom de-excitation spectroscopy results on the surfaces of clean semiconductors are shown. De-excitation occurs through resonant ionization followed by Auger neutralization. After a review of the results obtained on the clean surface of GaAs(110) at room temperature, the evolution of the Ge(111) effective surface density of states (SDOS) as a function of temperature is discussed on the basis of the temperature-induced surface structure transitions reported in literature by different authors. (C) 1998 Elsevier Science B.V. All rights reserved.File | Dimensione | Formato | |
---|---|---|---|
JElectrSpectrRelPhen_1998_IWASES.pdf
Accesso riservato
Descrizione: Articolo principale
Tipologia:
Versione pubblicata dall'editore
Dimensione
205.31 kB
Formato
Adobe PDF
|
205.31 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris