We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)02219-1].
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures / Mazzer, M; De Giorgi, M; Cingolani, R; Porello, G; Rossi, F; Molinari, Elisa. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 84:(1998), pp. 3437-3441.
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures
MOLINARI, Elisa
1998
Abstract
We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)02219-1].
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