We report on spin‐polarized photoelectron emission and quantum yield measurements performed on AlxGa1−x As alloys (0.08⩽x⩽0.65) which were grown by molecular beam epitaxy and activated in situ to negative electron affinity by exposure to Cs and O2. We investigate the electronic structure of the alloys near the band‐gap region. These alloys can be used as high‐ efficiency spin‐polarized photoelectron sources at photon energies matching convenient light sources.
Spin‐polarized photoelectron emission study of AlxGa1−xAs alloys grown by molecular beam epitaxy / F., Ciccacci; S. F., Alvarado; Valeri, Sergio. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 53:(1982), pp. 4395-4398.
Spin‐polarized photoelectron emission study of AlxGa1−xAs alloys grown by molecular beam epitaxy
VALERI, Sergio
1982
Abstract
We report on spin‐polarized photoelectron emission and quantum yield measurements performed on AlxGa1−x As alloys (0.08⩽x⩽0.65) which were grown by molecular beam epitaxy and activated in situ to negative electron affinity by exposure to Cs and O2. We investigate the electronic structure of the alloys near the band‐gap region. These alloys can be used as high‐ efficiency spin‐polarized photoelectron sources at photon energies matching convenient light sources.
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