Silicide formation is strongly affected by the presence of oxygen contained in the metal film. A study has been performed by heating at various times and temperatures samples constituted by a thin Pt film sputter deposited on a silicon substrate. Four different oxygen concentrations were implanted in the Pt film ranging from 1 to 0.1 at.%. The presence of oxygen slows down the growth rate of Pt2Si. At 315 °C in the sample with an oxygen concentration of 1 at.%, about 1000 Å of Pt2Si are formed after 20 min of annealing. During the silicide formation, the oxygen originally contained in the platinum films segregates at the Pt2Si/Pt interface. This accumulation acts as a barrier for the transport of Pt and a new phase, PtSi, can form at the Pt2Si/Si interface. The dose necessary to stop the Pt2Si reaction is about (2–4)×1015 at./cm2 at 315 °C.

The oxygen effect in the growth kinetics of platinum silicides / F., Nava; Valeri, Sergio; G., Majni; A., Cembali; G., Pignatel; G., Queirolo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 52:(1981), pp. 6641-6646.

The oxygen effect in the growth kinetics of platinum silicides

VALERI, Sergio;
1981

Abstract

Silicide formation is strongly affected by the presence of oxygen contained in the metal film. A study has been performed by heating at various times and temperatures samples constituted by a thin Pt film sputter deposited on a silicon substrate. Four different oxygen concentrations were implanted in the Pt film ranging from 1 to 0.1 at.%. The presence of oxygen slows down the growth rate of Pt2Si. At 315 °C in the sample with an oxygen concentration of 1 at.%, about 1000 Å of Pt2Si are formed after 20 min of annealing. During the silicide formation, the oxygen originally contained in the platinum films segregates at the Pt2Si/Pt interface. This accumulation acts as a barrier for the transport of Pt and a new phase, PtSi, can form at the Pt2Si/Si interface. The dose necessary to stop the Pt2Si reaction is about (2–4)×1015 at./cm2 at 315 °C.
1981
52
6641
6646
The oxygen effect in the growth kinetics of platinum silicides / F., Nava; Valeri, Sergio; G., Majni; A., Cembali; G., Pignatel; G., Queirolo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 52:(1981), pp. 6641-6646.
F., Nava; Valeri, Sergio; G., Majni; A., Cembali; G., Pignatel; G., Queirolo
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/761468
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