Results of electric field modulation of internal reflections in cleaved Ge(111) 2 × 1 surfaces are presented. They can be interpreted on the basis of a buckled model of the reconstructed surface with raised (lowered) atoms negatively (positively) charged. The value of the force constant for normal displacement of surface ions (1.1 × 105 dyn cm-1) is estimated
Effect of an Electric Field on the Optical Gap of Ge(111) 2 × 1 Surface States / G., Chiarotti; Nannarone, Stefano. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 37:(1976), pp. 934-937. [10.1103/PhysRevLett.37.934]
Effect of an Electric Field on the Optical Gap of Ge(111) 2 × 1 Surface States
NANNARONE, Stefano
1976
Abstract
Results of electric field modulation of internal reflections in cleaved Ge(111) 2 × 1 surfaces are presented. They can be interpreted on the basis of a buckled model of the reconstructed surface with raised (lowered) atoms negatively (positively) charged. The value of the force constant for normal displacement of surface ions (1.1 × 105 dyn cm-1) is estimated
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