Energy loss spectroscopy obtained on clean cleaved Si(111) covered with different gold thickness is considered. The results indicate that in the Si-Au system the interface is characterized by a Si rich phase with a well defined electron transition at 7. 5 ev energy loss. Increasing Au thickness the main changes in the spectrum arise in the low energy loss region and a gold-like behavior is observed for a gold coverage of 60 monolayers. The effects of annealing at 350 degree C are reported.
Energy loss spectroscopy (ELS) on the Si-Au system / P., Perfetti; Nannarone, Stefano; F., Patella; C., Quaresima; A., Savoia; F., Cerrina; M., Capozi. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 35:(1980), pp. 151-153. [10.1016/0038-1098(80)90233-1]
Energy loss spectroscopy (ELS) on the Si-Au system
NANNARONE, Stefano;
1980
Abstract
Energy loss spectroscopy obtained on clean cleaved Si(111) covered with different gold thickness is considered. The results indicate that in the Si-Au system the interface is characterized by a Si rich phase with a well defined electron transition at 7. 5 ev energy loss. Increasing Au thickness the main changes in the spectrum arise in the low energy loss region and a gold-like behavior is observed for a gold coverage of 60 monolayers. The effects of annealing at 350 degree C are reported.Pubblicazioni consigliate
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