Silicon carbide polytipes 6H-SiC and 3C-SiC were characterized by optical absorption at the C K edge in the near edge absorption region. 3C-SiC and 6H-SiC showed similarities for energies about 15 eV above the edge. Marked differences were found in the near edge region. A picture based on the p distribution of empty states was suitable to describe the main features of 3C-SiC. 6H-SiC showed important absorption anisotropies traceable to the anisotropies of the scattering paths as shown by full multiple scattering calculation performed by MXAN code. The role of self consistency is also discussed.
C KEdge NEXAFS of 6HSiC and 3CSiC Systems / M., Pedio; A., Giglia; N., Mahne; Nannarone, Stefano; S., Giovannini; C., Cepek; F., Boscherini; R., Carboni; M., Benfatto; S., Della Longa. - In: PHYSICA SCRIPTA. - ISSN 0031-8949. - STAMPA. - T115:(2005), pp. 308-308+. [10.1238/Physica.Topical.115a00308]
C KEdge NEXAFS of 6HSiC and 3CSiC Systems
NANNARONE, Stefano;
2005
Abstract
Silicon carbide polytipes 6H-SiC and 3C-SiC were characterized by optical absorption at the C K edge in the near edge absorption region. 3C-SiC and 6H-SiC showed similarities for energies about 15 eV above the edge. Marked differences were found in the near edge region. A picture based on the p distribution of empty states was suitable to describe the main features of 3C-SiC. 6H-SiC showed important absorption anisotropies traceable to the anisotropies of the scattering paths as shown by full multiple scattering calculation performed by MXAN code. The role of self consistency is also discussed.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
