Chemical treatment by hydrazine-sulfide solutions, known to produce surface nitridation of GaAs(100), was applied to GaAs(111)A and B surfaces. The chemistries of these treatments for the Ga-terminated A surface and the As-terminated B one were investigated using synchrotron radiation photoemission and Auger electron spectroscopies. For the B surface, such treatment was found to produce an effective surface nitridation, via substitution of surface arsenic with nitrogen atoms from hydrazine molecules. The process automatically stops after formation of one monolayer. In contrast, the A surface is covered by sulfur bonded to underlying gallium. This extreme dependence on surface polarity is explained by competitive adsorption processes of H S- and O H- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes / V. L., Berkovits; V. P., Ulin; O. E., Tereshchenko; D., Paget; A. C. H., Rowe; P., Chiaradia; B. P., Doyle; Nannarone, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 80:(2009), pp. D127-D135. [10.1103/PhysRevB.80.233303]

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

NANNARONE, Stefano
2009

Abstract

Chemical treatment by hydrazine-sulfide solutions, known to produce surface nitridation of GaAs(100), was applied to GaAs(111)A and B surfaces. The chemistries of these treatments for the Ga-terminated A surface and the As-terminated B one were investigated using synchrotron radiation photoemission and Auger electron spectroscopies. For the B surface, such treatment was found to produce an effective surface nitridation, via substitution of surface arsenic with nitrogen atoms from hydrazine molecules. The process automatically stops after formation of one monolayer. In contrast, the A surface is covered by sulfur bonded to underlying gallium. This extreme dependence on surface polarity is explained by competitive adsorption processes of H S- and O H- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.
2009
80
D127
D135
GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes / V. L., Berkovits; V. P., Ulin; O. E., Tereshchenko; D., Paget; A. C. H., Rowe; P., Chiaradia; B. P., Doyle; Nannarone, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 80:(2009), pp. D127-D135. [10.1103/PhysRevB.80.233303]
V. L., Berkovits; V. P., Ulin; O. E., Tereshchenko; D., Paget; A. C. H., Rowe; P., Chiaradia; B. P., Doyle; Nannarone, Stefano
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/743015
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 7
social impact