Experimentally and by ab initio calculations it is shown that adsorption of electropositive cesium on the As-rich surface of GaAs(001) and, in a symmetric fashion, adsorption of electronegative iodine on the Ga-rich surface, induce a decrease of the surface stability, thus facilitating surface etching. Conversely, Cs adsorption on the Ga-rich surface and I adsorption on the As-rich surface lead to an increased surface stability. Etching occurs when adsorption-induced charge transfer weakens the backbonds of the top arsenic atoms for the case of Cs on the As-rich β2(2 × 4) surface and the lateral bonds in the topmost surface layer for I on the Ga-rich ζ(4 × 2) surface. The possibilities of reversible transitions between the two reconstructed surfaces and of atomic layer etching with monolayer precision are demonstrated.
Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption / O. E., Tereshchenko; D., Paget; K. V., Toropetsky; V. L., Alperovich; S. V., Eremeev; A. V., Bakulin; S. E., Kulkova; B. P., Doyle; Nannarone, Stefano. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - STAMPA. - 116(2012), pp. 8535-8540.
Data di pubblicazione: | 2012 |
Titolo: | Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption |
Autore/i: | O. E., Tereshchenko; D., Paget; K. V., Toropetsky; V. L., Alperovich; S. V., Eremeev; A. V., Bakulin; S. E., Kulkova; B. P., Doyle; Nannarone, Stefano |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1021/jp211360d |
Rivista: | |
Volume: | 116 |
Pagina iniziale: | 8535 |
Pagina finale: | 8540 |
Codice identificativo ISI: | WOS:000302924900020 |
Codice identificativo Scopus: | 2-s2.0-84860122217 |
Citazione: | Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption / O. E., Tereshchenko; D., Paget; K. V., Toropetsky; V. L., Alperovich; S. V., Eremeev; A. V., Bakulin; S. E., Kulkova; B. P., Doyle; Nannarone, Stefano. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - STAMPA. - 116(2012), pp. 8535-8540. |
Tipologia | Articolo su rivista |
File in questo prodotto:

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris