The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage.
New Insights into SILC Monitoring During TDDB Stress / C. D., Y., G., B., M., J.o., K., M., J., H., S., D., K. W., A., T., N., Padovani, A., Larcher, L., Chris, H., P. D., K.. - ELETTRONICO. - (2012), pp. 5D.3.1-5D.3.5. (IEEE International Reliability Physics Symposium Anaheim (CA), USA Aprile 15-19, 2012).
New Insights into SILC Monitoring During TDDB Stress
PADOVANI, ANDREA;LARCHER, Luca;
2012
Abstract
The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage.
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