The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage.
New Insights into SILC Monitoring During TDDB Stress / C. D., Young; G., Bersuker; M., Jo; K., Matthews; J., Huang; S., Deora; K. W., Ang; T., Ngai; Padovani, Andrea; Larcher, Luca; Chris, Hobbs; P. D., Kirsch. - ELETTRONICO. - (2012), pp. 5D.3.1-5D.3.5. (Intervento presentato al convegno IEEE International Reliability Physics Symposium tenutosi a Anaheim (CA), USA nel Aprile 15-19, 2012).
New Insights into SILC Monitoring During TDDB Stress
PADOVANI, ANDREA;LARCHER, Luca;
2012
Abstract
The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage.
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