The influence of different layout parameters and of temperature on latch-up susceptibility has been studied on standard four-stripes test structures made using different processes: a standard n-well, a twin-tub and an epitaxial technology. Triggering characteristics of structures without guard rings can be fairly accurately predicted by two-dimensional simulations, performed by HFIELDS. Hysteresis effects in the holding characteristics are due to an uneven distribution of latch-up current within the structures, which has been detected by IR microscopy. Similar current redistribution effects can cause anomalies during pulsed measurements on CMOS integrated circuits. Three-diemsnional effects can be emulated by SPICE simulations.

The dependence of latch-up sensitivity on layout and technology features, as analyzed by electrical measurements, HFIELDS and SPICE simulations, and infrared microscopy characterization / E., Zanoni; G., Spiazzi; Pavan, Paolo; M., Cecchetti; M., Muschitiello. - STAMPA. - (1990), pp. 183-190. ((Intervento presentato al convegno ESREF'90 tenutosi a Bari (I) nel 2-5 october 1990.

The dependence of latch-up sensitivity on layout and technology features, as analyzed by electrical measurements, HFIELDS and SPICE simulations, and infrared microscopy characterization

PAVAN, Paolo;
1990-01-01

Abstract

The influence of different layout parameters and of temperature on latch-up susceptibility has been studied on standard four-stripes test structures made using different processes: a standard n-well, a twin-tub and an epitaxial technology. Triggering characteristics of structures without guard rings can be fairly accurately predicted by two-dimensional simulations, performed by HFIELDS. Hysteresis effects in the holding characteristics are due to an uneven distribution of latch-up current within the structures, which has been detected by IR microscopy. Similar current redistribution effects can cause anomalies during pulsed measurements on CMOS integrated circuits. Three-diemsnional effects can be emulated by SPICE simulations.
ESREF'90
Bari (I)
2-5 october 1990
183
190
E., Zanoni; G., Spiazzi; Pavan, Paolo; M., Cecchetti; M., Muschitiello
The dependence of latch-up sensitivity on layout and technology features, as analyzed by electrical measurements, HFIELDS and SPICE simulations, and infrared microscopy characterization / E., Zanoni; G., Spiazzi; Pavan, Paolo; M., Cecchetti; M., Muschitiello. - STAMPA. - (1990), pp. 183-190. ((Intervento presentato al convegno ESREF'90 tenutosi a Bari (I) nel 2-5 october 1990.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/737759
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