A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBT's is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionization.
Impact ionization and light emission phenomena in AlGaAs/GaAs HBT's / Pavan, Paolo; E., Zanoni; L., Vendrame; R., Malik; S., Bigliardi; M., Manfredi; A., Di Carlo; P., Lugli; C., Canali. - STAMPA. - (1992), pp. 717-722. (Intervento presentato al convegno International Symposium on GaAs and Related Compounds tenutosi a Karuizawa (Japan) nel Sept. 28 – Oct. 2, 1992).
Impact ionization and light emission phenomena in AlGaAs/GaAs HBT's
PAVAN, Paolo;
1992
Abstract
A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBT's is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionization.
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