In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 um COMS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurements of the turn-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress tests with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

Characterization of CMOS structures (0.6 um process) submitted to HBM and CDM ESD stress tests / G., Meneghesso; Colombo, P.; M., Brambilla; R., Annunziata; Pavan, Paolo; E., Zanoni. - STAMPA. - (1997), pp. 315-320. ((Intervento presentato al convegno 23rd ISTFA tenutosi a Santa Clara, CA (USA) nel 23-31 Oct. 1997.

Characterization of CMOS structures (0.6 um process) submitted to HBM and CDM ESD stress tests

PAVAN, Paolo;
1997-01-01

Abstract

In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 um COMS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurements of the turn-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress tests with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).
23rd ISTFA
Santa Clara, CA (USA)
23-31 Oct. 1997
315
320
G., Meneghesso; Colombo, P.; M., Brambilla; R., Annunziata; Pavan, Paolo; E., Zanoni
Characterization of CMOS structures (0.6 um process) submitted to HBM and CDM ESD stress tests / G., Meneghesso; Colombo, P.; M., Brambilla; R., Annunziata; Pavan, Paolo; E., Zanoni. - STAMPA. - (1997), pp. 315-320. ((Intervento presentato al convegno 23rd ISTFA tenutosi a Santa Clara, CA (USA) nel 23-31 Oct. 1997.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/737715
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