The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.

A study of ESD induced effects in high-voltage n-MOS and p-MOS transistors / Pavan, Paolo; E., Zanoni; B., Bonati; S., Martino; G., Dalla Libera. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 23:(1992), pp. 45-50.

A study of ESD induced effects in high-voltage n-MOS and p-MOS transistors

PAVAN, Paolo;
1992-01-01

Abstract

The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.
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A study of ESD induced effects in high-voltage n-MOS and p-MOS transistors / Pavan, Paolo; E., Zanoni; B., Bonati; S., Martino; G., Dalla Libera. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 23:(1992), pp. 45-50.
Pavan, Paolo; E., Zanoni; B., Bonati; S., Martino; G., Dalla Libera
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/737664
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