Ionization phenomena in A1GaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Impact-ionization phenomena in AlGaAs/GaAs HBT's / A., D.C., P., L., Pavan, P., E., Z., R., M.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 19:(1992), pp. 135-140. [10.1016/0167-9317(92)90408-J]
Impact-ionization phenomena in AlGaAs/GaAs HBT's
PAVAN, Paolo;
1992
Abstract
Ionization phenomena in A1GaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
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