By means of ab-initio calculations, we investigate the optical properties of pure a-SiNx samples, with x [0.4;1.8], and samples embedding silicon nanoclusters (NCs) of diameter0:5=<d<=1:0 nm. In the pure samples, the optical absorption gap and the radiative recombination rate vary according to the concentration of Si-N bonds. In the presence of NCs, the radiative rate of the samples is barely affected, indicating that the intense photoluminescence of experimental samples is mostly due to the matrix itself rather than to the NCs. Besides, we evidence animportant role of Si-N-Si bonds at the NC/matrix interface in the observed photoluminescence trend.
The influence of silicon nanoclusters on the optical properties of a-SiNx samples: A theoretical study / Guerra, Roberto; M., Ippolito; S., Meloni; Ossicini, Stefano. - In: APPLIED PHYSICS LETTERS. - ISSN 1077-3118. - STAMPA. - 100:(2012), pp. 181905-1-181905-4. [10.1063/1.4711017]
The influence of silicon nanoclusters on the optical properties of a-SiNx samples: A theoretical study
GUERRA, Roberto;OSSICINI, Stefano
2012
Abstract
By means of ab-initio calculations, we investigate the optical properties of pure a-SiNx samples, with x [0.4;1.8], and samples embedding silicon nanoclusters (NCs) of diameter0:5=
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