GaN LEDs suffer from the efficiency droop, limiting their use in applications like general lighting and projection displays. Different mechanisms have been held responsible for the droop. Different technological solutions have correspondingly been devised, and discriminating experiments have been proposed. We will report on a systematic analysis of above aspects (mechanisms, solutions, and experiments) carried out by means of numerical device simulations and their comparison with experimental results. Aims are (i) to improve the insight into the droop mechanism(s), (ii) to provide guidelines for LED optimization.

Analysis of efficiency-droop mechanisms in GaN-based light-emitting diodes, related technological solutions and discriminating experiments / Saguatti, Davide; Verzellesi, Giovanni; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn. - ELETTRONICO. - (2011), p. F1.3. ((Intervento presentato al convegno 9th International Conference on Nitride Semiconductors (ICNS-9) tenutosi a Glasgow (UK) nel July 2011.

Analysis of efficiency-droop mechanisms in GaN-based light-emitting diodes, related technological solutions and discriminating experiments

SAGUATTI, Davide;VERZELLESI, Giovanni;
2011

Abstract

GaN LEDs suffer from the efficiency droop, limiting their use in applications like general lighting and projection displays. Different mechanisms have been held responsible for the droop. Different technological solutions have correspondingly been devised, and discriminating experiments have been proposed. We will report on a systematic analysis of above aspects (mechanisms, solutions, and experiments) carried out by means of numerical device simulations and their comparison with experimental results. Aims are (i) to improve the insight into the droop mechanism(s), (ii) to provide guidelines for LED optimization.
9th International Conference on Nitride Semiconductors (ICNS-9)
Glasgow (UK)
July 2011
Saguatti, Davide; Verzellesi, Giovanni; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn
Analysis of efficiency-droop mechanisms in GaN-based light-emitting diodes, related technological solutions and discriminating experiments / Saguatti, Davide; Verzellesi, Giovanni; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn. - ELETTRONICO. - (2011), p. F1.3. ((Intervento presentato al convegno 9th International Conference on Nitride Semiconductors (ICNS-9) tenutosi a Glasgow (UK) nel July 2011.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/708944
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