In this work, we investigate different mechanisms that have been proposed to be at the origin of the efficiency droop, by comparing numerical device simulations with measurements from single-quantum-well (SQW) InGaN/GaN LEDs. The suitability of each mechanism to explain the droop as observed in the adopted devices and the impact on the droop effect of possible technological modifications are investigated.
Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes / Saguatti, Davide; Verzellesi, Giovanni; Bidinelli, Luca; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn. - ELETTRONICO. - (2011), p. Tu-1A.5. (Intervento presentato al convegno 38th International Symposium on Compound Semiconductors (ISCS 2011) tenutosi a Berlin (Germany) nel May 2011).
Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes
SAGUATTI, Davide;VERZELLESI, Giovanni;BIDINELLI, Luca;
2011
Abstract
In this work, we investigate different mechanisms that have been proposed to be at the origin of the efficiency droop, by comparing numerical device simulations with measurements from single-quantum-well (SQW) InGaN/GaN LEDs. The suitability of each mechanism to explain the droop as observed in the adopted devices and the impact on the droop effect of possible technological modifications are investigated.
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