In this work, we investigate different mechanisms that have been proposed to be at the origin of the efficiency droop, by comparing numerical device simulations with measurements from single-quantum-well (SQW) InGaN/GaN LEDs. The suitability of each mechanism to explain the droop as observed in the adopted devices and the impact on the droop effect of possible technological modifications are investigated.

Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes / Saguatti, Davide; Verzellesi, Giovanni; Bidinelli, Luca; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn. - ELETTRONICO. - (2011), p. Tu-1A.5. ((Intervento presentato al convegno 38th International Symposium on Compound Semiconductors (ISCS 2011) tenutosi a Berlin (Germany) nel May 2011.

Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes

SAGUATTI, Davide;VERZELLESI, Giovanni;BIDINELLI, Luca;
2011

Abstract

In this work, we investigate different mechanisms that have been proposed to be at the origin of the efficiency droop, by comparing numerical device simulations with measurements from single-quantum-well (SQW) InGaN/GaN LEDs. The suitability of each mechanism to explain the droop as observed in the adopted devices and the impact on the droop effect of possible technological modifications are investigated.
38th International Symposium on Compound Semiconductors (ISCS 2011)
Berlin (Germany)
May 2011
Saguatti, Davide; Verzellesi, Giovanni; Bidinelli, Luca; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn
Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes / Saguatti, Davide; Verzellesi, Giovanni; Bidinelli, Luca; M., Meneghini; G., Meneghesso; E., Zanoni; R., Butendeich; B., Hahn. - ELETTRONICO. - (2011), p. Tu-1A.5. ((Intervento presentato al convegno 38th International Symposium on Compound Semiconductors (ISCS 2011) tenutosi a Berlin (Germany) nel May 2011.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/708942
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