Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress

Cimino, S.; Padovani, Andrea; Larcher, Luca; Afanas’ev, V. V.; Hwang, H. J.; Lee, Y. G.; Jurczac, M.; Wouters, D.; Lee, B. H.; Hwang, H.; Pantisano, L.

doi:10.1149/1.3481643

Electrical characteristics of TiN/HfO2/TiN capacitors have been investigated by means of leakage current and Random Telegraph Noise measurements. Trap assisted transport simulation allowed the extraction of relevant parameters like trap density and trap energy position. The extracted parameters show striking similarities with those reported for HfO2 deposited on a Si surface (i.e., MOSFET applications). Additionally, even low bias Constant Voltage Stress was found to induce leakage current degradation on current vs voltage characteristics, preferentially at low voltage. The leakage current degradation is explained by preexisting defect precursors or by involvement of hydrogen in creating defects as observed on thermal SiO2 layers.

Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress / S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 33(2010), pp. 537-543.

Data di pubblicazione:	2010
Titolo:	Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress
Autore/i:	S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano
Autore/i UNIMORE:	S. Cimino PADOVANI, ANDREA LARCHER, Luca V. V. Afanas’ev H. J. Hwang Y. G. Lee M. Jurczac D. Wouters B. H. Lee H. Hwang L. Pantisano mostra contributor esterni nascondi contributor esterni
Digital Object Identifier (DOI):	http://dx.doi.org/10.1149/1.3481643
Codice identificativo Scopus:	2-s2.0-79952683673
Codice identificativo ISI:	WOS:000313332400058
Rivista:	ECS TRANSACTIONS
Volume:	33
Pagina iniziale:	537
Pagina finale:	543
Citazione:	Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress / S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 33(2010), pp. 537-543.
Tipologia	Relazione in Atti di Convegno

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http://hdl.handle.net/11380/645630

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