Electrical characteristics of TiN/HfO2/TiN capacitors have been investigated by means of leakage current and Random Telegraph Noise measurements. Trap assisted transport simulation allowed the extraction of relevant parameters like trap density and trap energy position. The extracted parameters show striking similarities with those reported for HfO2 deposited on a Si surface (i.e., MOSFET applications). Additionally, even low bias Constant Voltage Stress was found to induce leakage current degradation on current vs voltage characteristics, preferentially at low voltage. The leakage current degradation is explained by preexisting defect precursors or by involvement of hydrogen in creating defects as observed on thermal SiO2 layers.

Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress / S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 33:3(2010), pp. 537-543. [10.1149/1.3481643]

Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress

PADOVANI, ANDREA;LARCHER, Luca;
2010

Abstract

Electrical characteristics of TiN/HfO2/TiN capacitors have been investigated by means of leakage current and Random Telegraph Noise measurements. Trap assisted transport simulation allowed the extraction of relevant parameters like trap density and trap energy position. The extracted parameters show striking similarities with those reported for HfO2 deposited on a Si surface (i.e., MOSFET applications). Additionally, even low bias Constant Voltage Stress was found to induce leakage current degradation on current vs voltage characteristics, preferentially at low voltage. The leakage current degradation is explained by preexisting defect precursors or by involvement of hydrogen in creating defects as observed on thermal SiO2 layers.
2010
33
537
543
S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisan...espandi
Leakage current in TiN/HfO2/TiN MIM capacitors and degradation due to electrical stress / S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - STAMPA. - 33:3(2010), pp. 537-543. [10.1149/1.3481643]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/645630
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