We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embeddedfront-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
Monolithic integration of detectors and transistors on high-resistivity silicon / G. F., Dalla Betta; G., Batignani; M., Boscardin; L., Bosisio; P., Gregori; L., Pancheri; C., Piemonte; L., Ratti; Verzellesi, Giovanni; N., Zorzi. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 579:2(2007), pp. 658-663. [10.1016/j.nima.2007.05.260]
Monolithic integration of detectors and transistors on high-resistivity silicon
VERZELLESI, Giovanni;
2007
Abstract
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embeddedfront-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
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