The main aspects of the convergent beam electron diffraction technique (CBED) in a transmission electron microscope (TEM) for the quantitative strain analysis of silicon nanoregions are described. The presently employed procedure to obtain the components of the strain tensor from an experimental CBED pattern is detailed. The method has been applied to the analysis of strain in 0.22 mum active stripes of shallow trench isolation (STI) structures for non volatile memories. The strain distribution along cutlines parallel to the padoxide/Si interface in STI structures with different morphologies can be related to the different technological steps.
Strain analysis in sub-micron silicon devices by TEM/CBED / Armigliato, A; Balboni, R; Frabboni, Stefano; Benedetti, A; Cullis, Ag; Pavia, G.. - STAMPA. - 169:169(2001), pp. 467-472. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A).
Strain analysis in sub-micron silicon devices by TEM/CBED
FRABBONI, Stefano;
2001
Abstract
The main aspects of the convergent beam electron diffraction technique (CBED) in a transmission electron microscope (TEM) for the quantitative strain analysis of silicon nanoregions are described. The presently employed procedure to obtain the components of the strain tensor from an experimental CBED pattern is detailed. The method has been applied to the analysis of strain in 0.22 mum active stripes of shallow trench isolation (STI) structures for non volatile memories. The strain distribution along cutlines parallel to the padoxide/Si interface in STI structures with different morphologies can be related to the different technological steps.
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