A compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accurate prediction of the minimum p-stop (or p-spray) implant dose ensuring adequate interstrip isolation. The basic idea on which the proposed model relies is that the portion of the detector between two adjacent n-strips can effectively be assimilated to an equivalent n-channel MOSFET. The interstrip resistance can be evaluated as the output resistance of such an equivalent MOSFET using standard SPICE-like models. The influence of radiation-induced oxide charge and p-stop (or p-spray) voltage can be incorporated into the model by simply including in the threshold voltage expression the induced flat-band voltage shift and body-effect term, respectively.

Compact modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors / Verzellesi, Giovanni; G. F., DALLA BETTA; G. U., Pignatel. - ELETTRONICO. - (2000), pp. 3/25-3/27. ((Intervento presentato al convegno IEEE Nuclear Science Symposium (NSS) tenutosi a Lyon (France) nel Oct. 2000.

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