The microFlash (NROM) concept is a 2-bit memory cell using an ONO dielectric as a storage media. To establish the capabilities and applications of the technology, endurance tests were performed on a 2Mb device. No limitation was found to cycle the device to 10,000 cycles and beyond. The microFlash process has been qualified ad implemented in production for applications requiring a limited number of program-erase cycles. The pbjective of the described work was to significantly increase the number of cycles. R&D is in progress to qualify the device for 10,000 cycles.
Endurance optimization in microFlash Memory Device / Aloni, E., Gutman, M., Roizin, Y., Finzi, D., Hyun, C.I., Bloom, I., Levy, D., Lann, A., Pavan, P.. - STAMPA. - LC-1-1:(2000), pp. 298-299. (Solid State Devices and Materials Sendai, Japan Aug. 28-31, 2000).
Endurance optimization in microFlash Memory Device
PAVAN, Paolo
2000
Abstract
The microFlash (NROM) concept is a 2-bit memory cell using an ONO dielectric as a storage media. To establish the capabilities and applications of the technology, endurance tests were performed on a 2Mb device. No limitation was found to cycle the device to 10,000 cycles and beyond. The microFlash process has been qualified ad implemented in production for applications requiring a limited number of program-erase cycles. The pbjective of the described work was to significantly increase the number of cycles. R&D is in progress to qualify the device for 10,000 cycles.
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