The microFlash (NROM) concept is a 2-bit memory cell using an ONO dielectric as a storage media. To establish the capabilities and applications of the technology, endurance tests were performed on a 2Mb device. No limitation was found to cycle the device to 10,000 cycles and beyond. The microFlash process has been qualified ad implemented in production for applications requiring a limited number of program-erase cycles. The pbjective of the described work was to significantly increase the number of cycles. R&D is in progress to qualify the device for 10,000 cycles.
Endurance optimization in microFlash Memory Device / Aloni, E.; Gutman, M.; Roizin, Y.; Finzi, D.; Hyun, C. I.; Bloom, I.; Levy, D.; Lann, A.; Pavan, Paolo. - STAMPA. - LC-1-1:(2000), pp. 298-299. (Intervento presentato al convegno Solid State Devices and Materials tenutosi a Sendai, Japan nel Aug. 28-31, 2000).
Endurance optimization in microFlash Memory Device
PAVAN, Paolo
2000
Abstract
The microFlash (NROM) concept is a 2-bit memory cell using an ONO dielectric as a storage media. To establish the capabilities and applications of the technology, endurance tests were performed on a 2Mb device. No limitation was found to cycle the device to 10,000 cycles and beyond. The microFlash process has been qualified ad implemented in production for applications requiring a limited number of program-erase cycles. The pbjective of the described work was to significantly increase the number of cycles. R&D is in progress to qualify the device for 10,000 cycles.
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