This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2002), pp. 738-741. ((Intervento presentato al convegno Technical Proceedings of Fifth International Conference on Modeling and Simulation of Microsystem tenutosi a San Juan (Puerto Rico) nel 21-25 April 2002.

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

LARCHER, Luca;PAVAN, Paolo
2002

Abstract

This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.
Technical Proceedings of Fifth International Conference on Modeling and Simulation of Microsystem
San Juan (Puerto Rico)
21-25 April 2002
738
741
Larcher, Luca; Pavan, Paolo
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2002), pp. 738-741. ((Intervento presentato al convegno Technical Proceedings of Fifth International Conference on Modeling and Simulation of Microsystem tenutosi a San Juan (Puerto Rico) nel 21-25 April 2002.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/465611
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