This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2002), pp. 738-741. ((Intervento presentato al convegno Technical Proceedings of Fifth International Conference on Modeling and Simulation of Microsystem tenutosi a San Juan (Puerto Rico) nel 21-25 April 2002.
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
LARCHER, Luca;PAVAN, Paolo
2002-01-01
Abstract
This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.
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