In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
A Complete Study of SILC Effects on EEPROM Reliability / Larcher, Luca; S., Bertulu; Pavan, Paolo. - STAMPA. - 1:(2002), pp. 437-438. (Intervento presentato al convegno Reliability Physics Symposium Proceedings, 2002. 40th Annual tenutosi a Dallas (TX, USA) nel April 2002).
A Complete Study of SILC Effects on EEPROM Reliability
LARCHER, Luca;PAVAN, Paolo
2002
Abstract
In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
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