The optoelectronic structure of silicon shows remarkable changes if the material is reduced at the nanometre scale. Many efforts have been put on the study and the fabrication of light-emitting Si-based nanostructures. Here we present theoretical results concerning the eletronic and optical properties of Si confined quantum wells, wires and dots. The comparisons between our calculations and the experimental data help to elucidate the mechanisms involved in photoluminescence in confined Si. SINGAPORE: World Scientific.
First principle calculations of the electronic and optical properties of 2-,1-,and 0- dimensional confined Si structures / Ossicini, Stefano; Degoli, Elena; Barbato, D; Luppi, M; Pettenati, E.. - STAMPA. - (1999), pp. 3-13.
First principle calculations of the electronic and optical properties of 2-,1-,and 0- dimensional confined Si structures.
OSSICINI, Stefano;DEGOLI, Elena;
1999
Abstract
The optoelectronic structure of silicon shows remarkable changes if the material is reduced at the nanometre scale. Many efforts have been put on the study and the fabrication of light-emitting Si-based nanostructures. Here we present theoretical results concerning the eletronic and optical properties of Si confined quantum wells, wires and dots. The comparisons between our calculations and the experimental data help to elucidate the mechanisms involved in photoluminescence in confined Si. SINGAPORE: World Scientific.
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