The exploding market in mm-wave wireless communications market requires a simple transistor technology which: (i) exhibits high performance across a wide bias range to perform both transmit and receive operations; (ii) has high threshold uniformity to enable high density, high speed signal processing circuits; and (iii) has basic technological requirements which is relatively transparent to both commercially important materials, InP and GaAs. The heterojunction transistor technology presented here satisfies these requirements.

Junction heterostructures for high performance electronics / J. B., Shealy; W. N., Jiang; P. A., Parikh; Verzellesi, Giovanni; U. K., Mishra. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 38:(1995), pp. 1607-1610.

Junction heterostructures for high performance electronics

VERZELLESI, Giovanni;
1995

Abstract

The exploding market in mm-wave wireless communications market requires a simple transistor technology which: (i) exhibits high performance across a wide bias range to perform both transmit and receive operations; (ii) has high threshold uniformity to enable high density, high speed signal processing circuits; and (iii) has basic technological requirements which is relatively transparent to both commercially important materials, InP and GaAs. The heterojunction transistor technology presented here satisfies these requirements.
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1610
Junction heterostructures for high performance electronics / J. B., Shealy; W. N., Jiang; P. A., Parikh; Verzellesi, Giovanni; U. K., Mishra. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 38:(1995), pp. 1607-1610.
J. B., Shealy; W. N., Jiang; P. A., Parikh; Verzellesi, Giovanni; U. K., Mishra
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/460413
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