We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure.
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes / Verzellesi, Giovanni; G. F., Dalla Betta; L., Bosisio; M., Boscardin; G. U., Pignatel; G., Soncini. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 46:(1999), pp. 817-820. [10.1109/16.753724]
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
VERZELLESI, Giovanni;
1999
Abstract
We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure.
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