We report on Junction Field Effect Transistors and PIN diodes monolithically integrated on high-resistivity silicon by adopting a non-standard technology recently developed at IRST. In particular, a test structure, consisting of a small PIN diode DC-coupled to an integrated n-channel JFET in the double-gate configuration was fully characterised and spectroscopic measurements were carried out by adopting a novel double-feedback charge amplifier circuit. An ENC of about 60 electrons r.m.s. has been obtained at room temperature and at 10 ls shaping time; such a resolution is shown to be determined by the relatively high total capacitance present in this preliminary set-up, associated with the 1/f series noise of the transistor.
Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy / DALLA BETTA, G. F.; Pignatel, G. U.; Verzellesi, Giovanni; Boscardin, M.; Fazzi, A.; Bosisio, L.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 458:1-2(2001), pp. 275-280. [10.1016/S0168-9002(00)00871-8]
Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy
VERZELLESI, Giovanni;
2001
Abstract
We report on Junction Field Effect Transistors and PIN diodes monolithically integrated on high-resistivity silicon by adopting a non-standard technology recently developed at IRST. In particular, a test structure, consisting of a small PIN diode DC-coupled to an integrated n-channel JFET in the double-gate configuration was fully characterised and spectroscopic measurements were carried out by adopting a novel double-feedback charge amplifier circuit. An ENC of about 60 electrons r.m.s. has been obtained at room temperature and at 10 ls shaping time; such a resolution is shown to be determined by the relatively high total capacitance present in this preliminary set-up, associated with the 1/f series noise of the transistor.
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