We show that the accuracy of the gated diode method for measuring bulk generation lifetime and surface generationvelocity in high resistivity silicon depends critically on the gate length of the test device, as a result of nonidealities affecting the gated diode operation. Minimization of the surface generation velocity measurement error requires the gate length to be suitably decreased, while long gate length structures are needed for accurate bulk generation lifetime extraction.

Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes / Verzellesi, Giovanni; DALLA BETTA, G. F.; Boscardin, M.; Pignatel, G. U.; Bosisio, L.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 477:1-3(2002), pp. 220-225. [10.1016/S0168-9002(01)01885-X]

Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes

VERZELLESI, Giovanni;
2002

Abstract

We show that the accuracy of the gated diode method for measuring bulk generation lifetime and surface generationvelocity in high resistivity silicon depends critically on the gate length of the test device, as a result of nonidealities affecting the gated diode operation. Minimization of the surface generation velocity measurement error requires the gate length to be suitably decreased, while long gate length structures are needed for accurate bulk generation lifetime extraction.
2002
477
1-3
220
225
Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes / Verzellesi, Giovanni; DALLA BETTA, G. F.; Boscardin, M.; Pignatel, G. U.; Bosisio, L.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 477:1-3(2002), pp. 220-225. [10.1016/S0168-9002(01)01885-X]
Verzellesi, Giovanni; DALLA BETTA, G. F.; Boscardin, M.; Pignatel, G. U.; Bosisio, L.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/460388
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