A theoretical study is presented showing that the reverse leakage current thermally generated at the cutting edge of type-invertedp+/n single-sided silicon microstrip detectors is limited. Such behavior is shown to be related to a self-limiting mechanism acting on the edge surface generation, which prevents the net generation rate of electron-hole pairs at the detector edge from exceeding a saturation value, as the local hole density approaches its equilibrium value.
Two-dimensional numerical simulation of edge-generated currents in type-inverted, single-sided silicon microstrip detectors / Verzellesi, Giovanni; DALLA BETTA, G. F.; Pignatel, G. U.; Soncini, G.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 46:(1999), pp. 1253-1257.
Two-dimensional numerical simulation of edge-generated currents in type-inverted, single-sided silicon microstrip detectors
VERZELLESI, Giovanni;
1999
Abstract
A theoretical study is presented showing that the reverse leakage current thermally generated at the cutting edge of type-invertedp+/n single-sided silicon microstrip detectors is limited. Such behavior is shown to be related to a self-limiting mechanism acting on the edge surface generation, which prevents the net generation rate of electron-hole pairs at the detector edge from exceeding a saturation value, as the local hole density approaches its equilibrium value.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris