Abstract One promising approach for the development of silicon-based-light-emitting devices is the epitaxial growth of Si nanostructures. In this context, we propose the lattice matched system CaF2/Si/CaF2 as a prototype of a well controlled and ordered Si-based system with known microscopic structure. We present here a combined theoretical and experimental investigation of ultra-thin silicon (111) layers embedded in CaF2. Our all electron calculation predicts the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap. We have synthesized, by molecular beam epitaxy, Si/CaF2 multilayers which efficiently photoluminesce at room temperature. The photoluminescence spectra show a strong resemblance to those of porous silicon. There is a critical dependence of the photoluminescence efficiency on the thickness of the Si layers and a blue shift for decreasing Si layers thickness. Our results allow us to conclude unambiguously that quantum conf...

Si/CaF2 superlattices: a silicon light emitting nanostructure / Ossicini, Stefano; Fasolino, A.; Bernardini, F.; ARNAUD D'AVITAYA, F.; Vervoort, L.; Bassani, F.. - STAMPA. - 2777(1996), pp. 27-37. ((Intervento presentato al convegno ALT'95 Int. Symposium: Advanced Materials for Optics and Optoelectronics tenutosi a Prague, Czech Republic nel 4 September 1995 through 4 September 1995.

I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2021