Abstract One promising approach for the development of silicon-based-light-emitting devices is the epitaxial growth of Si nanostructures. In this context, we propose the lattice matched system CaF2/Si/CaF2 as a prototype of a well controlled and ordered Si-based system with known microscopic structure. We present here a combined theoretical and experimental investigation of ultra-thin silicon (111) layers embedded in CaF2. Our all electron calculation predicts the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap. We have synthesized, by molecular beam epitaxy, Si/CaF2 multilayers which efficiently photoluminesce at room temperature. The photoluminescence spectra show a strong resemblance to those of porous silicon. There is a critical dependence of the photoluminescence efficiency on the thickness of the Si layers and a blue shift for decreasing Si layers thickness. Our results allow us to conclude unambiguously that quantum conf...

Si/CaF2 superlattices: a silicon light emitting nanostructure / Ossicini, Stefano; Fasolino, A.; Bernardini, F.; ARNAUD D'AVITAYA, F.; Vervoort, L.; Bassani, F.. - STAMPA. - 2777:(1996), pp. 27-37. ((Intervento presentato al convegno ALT'95 Int. Symposium: Advanced Materials for Optics and Optoelectronics tenutosi a Prague, Czech Republic nel 4 September 1995 through 4 September 1995.

Si/CaF2 superlattices: a silicon light emitting nanostructure

OSSICINI, Stefano;
1996

Abstract

Abstract One promising approach for the development of silicon-based-light-emitting devices is the epitaxial growth of Si nanostructures. In this context, we propose the lattice matched system CaF2/Si/CaF2 as a prototype of a well controlled and ordered Si-based system with known microscopic structure. We present here a combined theoretical and experimental investigation of ultra-thin silicon (111) layers embedded in CaF2. Our all electron calculation predicts the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap. We have synthesized, by molecular beam epitaxy, Si/CaF2 multilayers which efficiently photoluminesce at room temperature. The photoluminescence spectra show a strong resemblance to those of porous silicon. There is a critical dependence of the photoluminescence efficiency on the thickness of the Si layers and a blue shift for decreasing Si layers thickness. Our results allow us to conclude unambiguously that quantum conf...
ALT'95 Int. Symposium: Advanced Materials for Optics and Optoelectronics
Prague, Czech Republic
4 September 1995 through 4 September 1995
2777
27
37
Ossicini, Stefano; Fasolino, A.; Bernardini, F.; ARNAUD D'AVITAYA, F.; Vervoort, L.; Bassani, F.
Si/CaF2 superlattices: a silicon light emitting nanostructure / Ossicini, Stefano; Fasolino, A.; Bernardini, F.; ARNAUD D'AVITAYA, F.; Vervoort, L.; Bassani, F.. - STAMPA. - 2777:(1996), pp. 27-37. ((Intervento presentato al convegno ALT'95 Int. Symposium: Advanced Materials for Optics and Optoelectronics tenutosi a Prague, Czech Republic nel 4 September 1995 through 4 September 1995.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/459144
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