Abstract The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigated. Through ab initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. We find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confined systems.
Role of defects in Si/SiO2 quantum wells / Degoli, Elena; Ossicini, Stefano. - In: OPTICAL MATERIALS. - ISSN 0925-3467. - STAMPA. - 17:1-2(2001), pp. 95-98. [10.1016/S0925-3467(01)00027-1]
Role of defects in Si/SiO2 quantum wells
DEGOLI, Elena;OSSICINI, Stefano
2001
Abstract
Abstract The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigated. Through ab initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. We find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confined systems.
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