Polycrystalline silicon films, deposited by low-pressure chemical vapor deposition at 570° and 620°C, and doped withphosphorus by ion implantation, have been studied in terms of: dopant activation, carrier Hall mobility, and microstructure,as a function of the annealing temperature. Higher activation and carrier mobility were obtained on samples depositedat lower temperature, which were amorphous [by x-ray diffraction and transmission electron microscopy (TEM)] afterthe deposition step, in contrast with those deposited at higher temperature, which were polycrystalline. Transmissionelectron microscopy observations on a cross section showed a better recrystallization of the amorphous films during ahigh-temperature step, and mean grain size values which agree qualitatively with those calculated from grain boundarymobilities.

DOPANT ACTIVATION, CARRIER MOBILITY, AND TEM STUDIES IN POLYCRYSTALLINE SILICON FILMS / Queirolo, G; Servida, E; Baldi, L; Pignatel, G; Armigliato, A; Frabboni, Stefano; Corticelli, F.. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 137:(1990), pp. 967-971.

DOPANT ACTIVATION, CARRIER MOBILITY, AND TEM STUDIES IN POLYCRYSTALLINE SILICON FILMS

FRABBONI, Stefano;
1990-01-01

Abstract

Polycrystalline silicon films, deposited by low-pressure chemical vapor deposition at 570° and 620°C, and doped withphosphorus by ion implantation, have been studied in terms of: dopant activation, carrier Hall mobility, and microstructure,as a function of the annealing temperature. Higher activation and carrier mobility were obtained on samples depositedat lower temperature, which were amorphous [by x-ray diffraction and transmission electron microscopy (TEM)] afterthe deposition step, in contrast with those deposited at higher temperature, which were polycrystalline. Transmissionelectron microscopy observations on a cross section showed a better recrystallization of the amorphous films during ahigh-temperature step, and mean grain size values which agree qualitatively with those calculated from grain boundarymobilities.
137
967
971
DOPANT ACTIVATION, CARRIER MOBILITY, AND TEM STUDIES IN POLYCRYSTALLINE SILICON FILMS / Queirolo, G; Servida, E; Baldi, L; Pignatel, G; Armigliato, A; Frabboni, Stefano; Corticelli, F.. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 137:(1990), pp. 967-971.
Queirolo, G; Servida, E; Baldi, L; Pignatel, G; Armigliato, A; Frabboni, Stefano; Corticelli, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/451891
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