The use of TiSi2 layers as ohmic contacts in complementary MOS (CMOS) devices is expected to introduce large distortions in the underlying silicon which may degrade the device performances. In this work, the TEM technique known as convergent beam electron diffraction (CBED) has been employed to map the strain distributions across (1 1 0) cross-sectional specimens of sub-quarter-micron CMOS structures. Different experimental set-ups in terms of energy filtering, liquid nitrogen cooling and zone axis have been explored and compared to each other by using three differently equipped microscopes. The strain induced on silicon by TiSi2 layers has then been investigated. quantified and compared with that due to the presence of an oxide isolation trench. Also, the effects of depositing a TEN capping layer on TiSi2 have been analysed. Our results show that its presence results in a more tensile strain without altering the strain distribution trend. (C) 2002 Elsevier Science B.V. All rights reserved.

Strain Induced by Ti Salicidation in Sub-quarter-micron CMOS Devices, as Measured by TEM/CBED / Benedetti, A.; Cullis, A. G.; Armigliato, A.; Balboni, R.; Frabboni, Stefano; Mastracchio, G. F.; Pavia, G.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 188:1-2(2002), pp. 214-218. [10.1016/S0169-4332(01)00750-4]

Strain Induced by Ti Salicidation in Sub-quarter-micron CMOS Devices, as Measured by TEM/CBED

FRABBONI, Stefano;
2002

Abstract

The use of TiSi2 layers as ohmic contacts in complementary MOS (CMOS) devices is expected to introduce large distortions in the underlying silicon which may degrade the device performances. In this work, the TEM technique known as convergent beam electron diffraction (CBED) has been employed to map the strain distributions across (1 1 0) cross-sectional specimens of sub-quarter-micron CMOS structures. Different experimental set-ups in terms of energy filtering, liquid nitrogen cooling and zone axis have been explored and compared to each other by using three differently equipped microscopes. The strain induced on silicon by TiSi2 layers has then been investigated. quantified and compared with that due to the presence of an oxide isolation trench. Also, the effects of depositing a TEN capping layer on TiSi2 have been analysed. Our results show that its presence results in a more tensile strain without altering the strain distribution trend. (C) 2002 Elsevier Science B.V. All rights reserved.
2002
188
1-2
214
218
Strain Induced by Ti Salicidation in Sub-quarter-micron CMOS Devices, as Measured by TEM/CBED / Benedetti, A.; Cullis, A. G.; Armigliato, A.; Balboni, R.; Frabboni, Stefano; Mastracchio, G. F.; Pavia, G.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 188:1-2(2002), pp. 214-218. [10.1016/S0169-4332(01)00750-4]
Benedetti, A.; Cullis, A. G.; Armigliato, A.; Balboni, R.; Frabboni, Stefano; Mastracchio, G. F.; Pavia, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/451865
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