Conventional, high-resolution electron microscopy and electron spectroscopy imaging methods have been applied to the characterization of furnace-annealed B-implanted Si and self-annealed As-implanted Si. The combination of these techniques allowed us to point out the presence of a coherent precipitation in the SiBx system and the segregation of As at the (111) surfaces of octahedral cavities produced during self-annealing implantation of Si. A simple ideal structural model of the voids with segregated As is proposed.

Electon spectroscopic imaging of dopant precipitation and segregation in silicon / Frabboni, Stefano; Lulli, G; MERLI P., G; Migliori, A; Bauer, R.. - In: ULTRAMICROSCOPY. - ISSN 0304-3991. - STAMPA. - 35:(1991), pp. 265-269.

Electon spectroscopic imaging of dopant precipitation and segregation in silicon

FRABBONI, Stefano;
1991

Abstract

Conventional, high-resolution electron microscopy and electron spectroscopy imaging methods have been applied to the characterization of furnace-annealed B-implanted Si and self-annealed As-implanted Si. The combination of these techniques allowed us to point out the presence of a coherent precipitation in the SiBx system and the segregation of As at the (111) surfaces of octahedral cavities produced during self-annealing implantation of Si. A simple ideal structural model of the voids with segregated As is proposed.
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Electon spectroscopic imaging of dopant precipitation and segregation in silicon / Frabboni, Stefano; Lulli, G; MERLI P., G; Migliori, A; Bauer, R.. - In: ULTRAMICROSCOPY. - ISSN 0304-3991. - STAMPA. - 35:(1991), pp. 265-269.
Frabboni, Stefano; Lulli, G; MERLI P., G; Migliori, A; Bauer, R.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/451855
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