A new method has been devised for investigation by TEM of th electrostatic microfield associated with reverse biase p-n junctions. By means of electron holography and optical inteferometry it is possible to obtain on the reconstructed images two-dimensional representations of the projected potential distribution inside and outside the specimen
Electron holographic observations of the electrostatic field associated with thin reverse-biased p-n junctions / Frabboni, Stefano; Matteucci, G; Pozzi, G; Vanzi, M.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 55:(1985), pp. 2196-2199.
Electron holographic observations of the electrostatic field associated with thin reverse-biased p-n junctions
FRABBONI, Stefano;
1985
Abstract
A new method has been devised for investigation by TEM of th electrostatic microfield associated with reverse biase p-n junctions. By means of electron holography and optical inteferometry it is possible to obtain on the reconstructed images two-dimensional representations of the projected potential distribution inside and outside the specimen
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