Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar technology with shallow, 0.25 micron, base-emitter junctions was evaluated by means of high current and high temperature stresses.
Failures induced by electromigration in ECL 100k devices / C., Canali; Fantini, Fausto; E., Zanoni; A., Giovannetti; P., Brambilla. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 24:(1984), pp. 77-100.
Failures induced by electromigration in ECL 100k devices
FANTINI, Fausto;
1984
Abstract
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar technology with shallow, 0.25 micron, base-emitter junctions was evaluated by means of high current and high temperature stresses.
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