Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar technology with shallow, 0.25 micron, base-emitter junctions was evaluated by means of high current and high temperature stresses.
Failures induced by electromigration in ECL 100k devices / C., Canali; Fantini, Fausto; E., Zanoni; A., Giovannetti; P., Brambilla. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 24:(1984), pp. 77-100. [10.1016/0026-2714(84)90641-1]
Failures induced by electromigration in ECL 100k devices
FANTINI, Fausto;
1984
Abstract
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar technology with shallow, 0.25 micron, base-emitter junctions was evaluated by means of high current and high temperature stresses.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
