Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrease in Idssand Vpand an increase in R0. The failure mechanism was investigated by electrical and structural analyses with SEM, microprobe, and Auger spectrometry, and turns out to be a thermally activated Au-GaAs interdiffusion leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFET's and can lead to burn-out of devices.

Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's / C., Canali; F., Castaldo; Fantini, Fausto; D., Ogliari; L., Umena; E., Zanoni. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 7:(1986), pp. 185-187.

Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's

FANTINI, Fausto;
1986

Abstract

Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrease in Idssand Vpand an increase in R0. The failure mechanism was investigated by electrical and structural analyses with SEM, microprobe, and Auger spectrometry, and turns out to be a thermally activated Au-GaAs interdiffusion leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFET's and can lead to burn-out of devices.
1986
7
185
187
Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's / C., Canali; F., Castaldo; Fantini, Fausto; D., Ogliari; L., Umena; E., Zanoni. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 7:(1986), pp. 185-187.
C., Canali; F., Castaldo; Fantini, Fausto; D., Ogliari; L., Umena; E., Zanoni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/451803
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