DC tests may be the method on which to found an unitary methodology for setting and analysis of GaAs MESFET reliability studies. Each failure mechanism must be stressed without introducing erroneous one, due to the artificial conditions of accelerated tests. A text fixture for these tests must enable the hgghest contro of aging conditions.
Text fixture for MESFET reliability life tests / C., Canali; F., Chiussi; Fantini, Fausto; G., Muzzin; L., Umena. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 27:(1987), pp. 897-911.
Text fixture for MESFET reliability life tests
FANTINI, Fausto;
1987
Abstract
DC tests may be the method on which to found an unitary methodology for setting and analysis of GaAs MESFET reliability studies. Each failure mechanism must be stressed without introducing erroneous one, due to the artificial conditions of accelerated tests. A text fixture for these tests must enable the hgghest contro of aging conditions.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris