The study of the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200, 240 and 300°C.
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's / I., DE MUNARI; Fantini, Fausto; P., Conti. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 35:(1995), pp. 631-635.
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's
FANTINI, Fausto;
1995
Abstract
The study of the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200, 240 and 300°C.File in questo prodotto:
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