The study of the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200, 240 and 300°C.
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's / I., DE MUNARI; Fantini, Fausto; P., Conti. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 35:(1995), pp. 631-635.
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's
FANTINI, Fausto;
1995
Abstract
The study of the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200, 240 and 300°C.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
