A Monte Carlo simulation code has been developed to study the effect of phonon perturbations in hot-electron transport in semiconductors. The modifications of carrier drift velocity and mean energy induced by the perturbed acoustic-phonon distribution are studied at low temperatures in p-Ge. Under appropriate conditions, current saturation is obtained as a result of the steady-state phonon perturbation. The Monte Carlo analysis has been complemented and compared with an analytical approach based on a heated and displaced Maxwellian distribution for the electron gas.
Effect of a perturbed acoustic-phonon distribution on hot-electron transport: a Monte Carlo analysis / Bordone, Paolo; Jacoboni, Carlo; P., Lugli; L., Reggiani; P., Kocevar. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 61:(1987), pp. 1460-1468.