The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual Flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the Flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories.

Flash memory cells - An overview / Pavan, Paolo; R., Bez; P., Olivo; E., Zanoni. - In: PROCEEDINGS OF THE IEEE. - ISSN 0018-9219. - STAMPA. - 85(1997), pp. 1248-1271.

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2021