Metastable deexcitation spectroscopy (MDS) is used to probe the surface electronic properties of semiconductor surfaces and different interfaces with semiconductors. Results are compared to photoemission data and calculations. The following case studies are treated: clean GaAs(110), clean Ge(111)c(2 x 8), Sb/GaAs(110), H:GaAs(110), Yb/GaAs(110), Yb/Si(100) and Ge(111) surface incomplete melting. For each system, MDS spectral features are related to surface valence band (VB) states.
Surface electronic properties by metastable deexcitation spectroscopy / Nannarone, Stefano; Pasquali, Luca. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 182:1-4(2001), pp. 227-234. [10.1016/S0168-583X(01)00680-2]
Surface electronic properties by metastable deexcitation spectroscopy
NANNARONE, Stefano;PASQUALI, Luca
2001
Abstract
Metastable deexcitation spectroscopy (MDS) is used to probe the surface electronic properties of semiconductor surfaces and different interfaces with semiconductors. Results are compared to photoemission data and calculations. The following case studies are treated: clean GaAs(110), clean Ge(111)c(2 x 8), Sb/GaAs(110), H:GaAs(110), Yb/GaAs(110), Yb/Si(100) and Ge(111) surface incomplete melting. For each system, MDS spectral features are related to surface valence band (VB) states.
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