The optimal design for infrared second harmonic generation (SHG) is determined for a GaAs-based quantum device using a recently developed genetic approach. Both the compositional parameters and electric field are simultaneously optimized, and the quantum limit for SHG, set by the trade-off between large dipole moments (favoring electron delocalization) and large overlaps (favoring electron localization), is determined. Optimal devices are generally obtained that have an asymmetric double quantum well shape with narrow barriers and a graded region sideways to the largest well. An electric field is not found to lead to improved SHG if the compositional parameters are optimized.

Optimal design and quantum limit for second harmonic generation in semiconductor heterostructures / Goldoni, Guido. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 89:3(2001), pp. 1755-1758. [10.1063/1.1334939]

Optimal design and quantum limit for second harmonic generation in semiconductor heterostructures

GOLDONI, Guido
2001

Abstract

The optimal design for infrared second harmonic generation (SHG) is determined for a GaAs-based quantum device using a recently developed genetic approach. Both the compositional parameters and electric field are simultaneously optimized, and the quantum limit for SHG, set by the trade-off between large dipole moments (favoring electron delocalization) and large overlaps (favoring electron localization), is determined. Optimal devices are generally obtained that have an asymmetric double quantum well shape with narrow barriers and a graded region sideways to the largest well. An electric field is not found to lead to improved SHG if the compositional parameters are optimized.
2001
89
3
1755
1758
Optimal design and quantum limit for second harmonic generation in semiconductor heterostructures / Goldoni, Guido. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 89:3(2001), pp. 1755-1758. [10.1063/1.1334939]
Goldoni, Guido
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/306959
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