We report ab-initio calculations of the electronic and optical properties of Si quantum wires with different species passivating the dangling bonds, When O-H group substitutes H atoms the band gap energy lowers and new features in the low energy side of the dielectric function arise. Our results interpret succesfully the experimental data of the oxidation induced changes in the luminescence and infrared absorption spectra of porous silicon.
The optical transition in a silicon wire passivated by H and O-H / Ossicini, Stefano; Bisi, Olmes. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - STAMPA. - 54:(1997), pp. 127-134.
The optical transition in a silicon wire passivated by H and O-H
OSSICINI, Stefano;BISI, Olmes
1997
Abstract
We report ab-initio calculations of the electronic and optical properties of Si quantum wires with different species passivating the dangling bonds, When O-H group substitutes H atoms the band gap energy lowers and new features in the low energy side of the dielectric function arise. Our results interpret succesfully the experimental data of the oxidation induced changes in the luminescence and infrared absorption spectra of porous silicon.
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